Title:
Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes
Author(s):
Bank, SR; Yuen, HB; Bae, H; Wistey, MA; Moto, A; Harris, JS
Journal:
Applied Physics Letters
Date Published:
2006-6
Title:
The role of antimony on properties of widely varying GaInNAsSb compositions
Author(s):
Yuen, Homan B.; Bank, Seth R.; Bae, Hopil; Wistey, Mark A.; Harris Jr., James S
Journal:
Journal of Applied Physics
Date Published:
2006-5
Title:
Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells
Author(s):
Yuen, HB; Bank, SR; Bae, H; Wistey, MA; Harris, JS
Journal:
Physics Letters
Date Published:
2006-5
Title:
Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications
Author(s):
Bank, SR; Yuen, HB; Bae, H; Wistey, MA; Harris, JS
Journal:
Applied Physics Letters
Date Published:
2006-5
Title:
Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs
Author(s):
Harris, JS, et. al.
Journal:
Journal of Physics: Condensed Matter
Date Published:
2006-5
Title:
Green emission from InP-GaP quantum-dot light-emitting diodes
Author(s):
Hatami, F; Masselink, WT; Lordi, V; Harris, JS
Journal:
IEEE Phoyonics Technology Letters
Date Published:
2006-3
Details:
March/April 2006
Title:
Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators
Author(s):
Yu-Hsuan Kuo; Yong Kyu Lee; Yangsi Ge; Shen Ren; J. E. Roth; T. I. Kamins; D.A. B. Miller; J. S. Harris, Jr.
Journal:
EEE Journal of Selected Topics in Quantum Electronics
, Volume 12
, Number 6
Date Published:
2006-12
Title:
Integrated photonic switches for nanosecond packet-switched optical wavelength conversion
Author(s):
Harris, JS, et. al.
Journal:
Optics Express
Date Published:
2006-1-9
Title:
Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions
Author(s):
Harris, JS, et. al.
Journal:
Electronics Letters
Date Published:
2006-1-5
Title:
Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 mu m
Author(s):
Harris, JS, et. al.
Journal:
SOLID STATE COMMUNICATIONS
Date Published:
2006-1
Title:
Side-coupled fibre semiconductor laser
Author(s):
Harris, JS, et. al.
Journal:
Electronics Letters
, Volume 41
, Number 20
Date Published:
2005-9-29
Details:
Demonstration of evanescent coupling of semiconductor laser directly into a single mode fiber.
Title:
Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells
Author(s):
Harris, JS, et. al.
Journal:
JOURNAL OF APPLIED PHYSICS
Date Published:
2005-9-15
Title:
On the temperature sensitivity of 1.5- mu m GaInNAsSb lasers
Author(s):
Harris, JS, et. al.
Journal:
IEEE Journal of Selected Topics in Quantum Electronics
Date Published:
2005-9
Details:
Sept.-Oct. 2005.
Title:
The opportunities, successes and challenges for GaInNAsSb
Author(s):
Harris, J. S.
Journal:
Journal of Crystal Growth
, Volume 278
, Number 1-4
Date Published:
2005-5-1
Details:
Review of molecular beam epitaxial (MBE) growth of GaInNAsSb and its application to low threshold current semiconductor lasers and the first long wavelength vertical cavity surface emitting laser (VCSEL) on GaAs.
Title:
Nitrogen plasma optimization for high-quality dilute nitrides
Author(s):
Harris, JS, et. al.
Journal:
Journal of Crystal Growth
Date Published:
2005-5-1
Title:
Red light-emitting diodes based on InP/GaP quantum dots
Author(s):
Harris, JS, et. al.
Journal:
Journal of Applied Physics
Date Published:
2005-5-1
Title:
Band-gap discontinuity in GaN{sub 0.02}As{sub 0.87}Sb{sub 0.11}/GaAs single-quantum wells investigated by photoreflectance spectroscopy
Author(s):
Harris, JS, et. al.
Journal:
Applied Physics Letters
Date Published:
2005-4-4
Title:
Recombination, gain, band structure, efficiency, and reliability of 1.5-mu m GaInNAsSb/GaAs lasers
Author(s):
Harris, JS, et. al.
Journal:
Journal of Applied Physics
Date Published:
2005-4-15
Title:
Nearest-neighbor distributions in Ga1-xInxNyAs1-y and Ga1-xInxNyAs1-y-zSbz thin films upon annealing
Author(s):
Harris, Js, et. al.
Journal:
Physical Review B
Date Published:
2005-3
Title:
Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance
Author(s):
Harris, Js, et. al.
Journal:
Applied Physics Letters
Date Published:
2005-2-28
Title:
Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material
Author(s):
Harris, JS, et. al.
Journal:
Journal of Superconductivity
Date Published:
2005-2
Title:
Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector
Author(s):
Harris, JS, et. al.
Journal:
APPLIED PHYSICS LETTERS
Date Published:
2005-12-26
Title:
Strong quantum confined Stark effect in germanium quantum-well structures on silicon
Author(s):
Y.-H. Kuo; Y. K. Lee; Y. Ge; S. Ren; J. E. Roth; T. I. Kamins; D. A. B. Miller; J. S. Harris
Journal:
Nature
, Volume 437
Date Published:
2005-10-27
Details:
First demonstration of the quantum confined Stark effect in Ge/SiGe quantum wells and application of strong absorption for high speed optical modulators that can be integrated with Si CMOS.
Title:
Growth and magnetism of Cr-doped InN
Author(s):
Harris, JS, et. al.
Journal:
Applied Physics Letters
Date Published:
2005-10-24
Title:
Spectral shaping of electrically controlled MSM-based tunable photodetectors
Author(s):
Harris, JS, et. al.
Journal:
IEEE Photonics Technology Letters
Date Published:
2005-10
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